Author:
Fujikake S.,Ohta H.,Asano A.,Ichikawa Y.,Sakai H.
Abstract
ABSTRACTHydrogenated amorphous silicon oxide (a-SiO:H) films were prepared by rf glow discharge decomposition of SiH4, CO2 and H2 gas mixture. These films showed better properties than a-SiC:H films. By applying the a-SiO:H to the p-layer, we attained an efficiency of 12.5% for 1cm2 single junction solar cells and a total-area efficiency of 10.1% for 30cm × 40cm tandem submodules.
Publisher
Springer Science and Business Media LLC
Cited by
29 articles.
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