Assessment of Free Electron to Free Hole Ratios in a-Si:H By Ambipolar Diffusion and Photoconductivity Measurements

Author:

Pipoz Patrice,Sauvain Evelyne,Hubin Jacques,Shah Arvind

Abstract

ABSTRACTThe authors report on systematic photoconductivity σph and ambipolar diffusion length Lamb measurements carried out on a series of lightly p- and n-doped samples and monitored throughout the entire light-induced degradation process. The results are interpreted based on a transport model involving free carriers (nf and pf), localized charge on bandtails, as well as dangling bond and dopant charges.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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