Author:
Benrakkad M. S.,Perez-Rodriguez A.,Jahwari T.,Samitier J.,Lopez-Villegas J. M.,Morante J. R.
Abstract
ABSTRACTRaman spectroscopy is applied for the analysis of polysilicon films deposited on SiO2 sacrificial layers. Different deposition technologies and processing parameters have been studied. The features of the first order Si Raman signal (shape, width and position of maximum) are analyzed in order to evaluate the stress average value in the scattering volume. MicroRaman measurements performed at different points on the edge of the samples allows the estimation of the stress gradient through the polysilicon layers. These measurements are correlated with the structure obtained by using micromachined test structures.
Publisher
Springer Science and Business Media LLC
Cited by
11 articles.
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