Deposition of Cubic-SiC Thin Films on Si (111) using the Molecular Ion Beam Technique

Abstract

AbstractSiC thin films were formed on Si (111) at growth temperatures of 750–1000 °C using the molecular ion beam technique, with a precursor of methylsilicenium ions (SiCH3+). The chemical bindings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction. As a result, 3C-SiC (111) was grown on Si (111) substrates without carbonized treatments.