High Resolution Triple Axis Diffractometry in Indium-Carbon and Gallium-Carbon Co-implanted Gallium Arsenide

Abstract

ABSTRACTHigh-resolution x-ray triple axis diffractometry was used to characterize damage recovery in gallium arsenide implanted with gallium or indium ions, and co-implanted with carbon ions. From reciprocal space mapping around the (004) reciprocal lattice point, the evolution of residual strain and the lattice plane tilt induced by the ion implantation and annealing processes were analyzed. The lattice damage in implanted gallium arsenide is dependent on the dose and ion type; annealing subsequently alters the structural properties of the material. For example, In/C co-implanted gallium arsenide shows a greater amount of residual damage as compared to Ga/C co-implanted gallium arsenide after rapid thermal annealing at 885 °C for 5 seconds. For a given Group III ion / C co-implant, we observe the highest p-type activation when the Group III ion and C implant doses are the same. Increasing the Group III ion dose reduces the material quality and has a concomitant negative effect on the electrical properties of the material. These results suggest that reciprocal space maps can provide insight into the relationship between the structure and properties of implanted compound semiconductors.