Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

Abstract

ABSTRACTSingle crystals of cubic SiC were hetero-epitaxially grown on Si by chemical vapor deposition (CVD) method. A carbonized buffer layer on Si is utilized to overcome the large lattice mismatch of 20 %. Optimum conditions to make the buffer layers and those structures are discussed. Crystal quality of the CVD grown cubic SiC is analyzed by using X-ray analyses and microscopic observations. Electrical properties controlled by impurity doping during epitaxial growth are described together with fundamental electronic devices.