Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC-Reference-Cited by-同舟云学术

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Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC

Published:1984-11-20 Issue:Part 2, No. 11 Volume:23 Page:L862-L864
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shibahara Kentaro,Nishino Shigehiro,Matsunami Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contributions to the Density of Interface States in SiC MOS Structures;Silicon Carbide;2004

2. N-channel 3C-SiC MOSFETs on silicon substrate;IEEE Electron Device Letters;2002-08

3. Silica films on silicon carbide: a review of electrical properties and device applications;Journal of Non-Crystalline Solids;2001-02

4. Theoretical investigation of incomplete ionization of dopants in 6H–SiC metal-oxide-semiconductor capacitors;Journal of Applied Physics;1999-08-15

5. Thermal effect on K-promoted oxidation of β-SiC;Applied Surface Science;1998-09

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