Low-temperature growth of ZnO nanowires

Abstract

ZnO nanowires with diameters of 40–200 nm were grown with a gold catalyst in bulk quantities on alumina substrates and sapphire substrates. This synthesis procedure was achieved by heating a 1:1 mixture of ZnO and Zn powder to 500 °C with trace water vapor as an oxidizer. X-ray diffraction and transmission electron microscopy revealed that the nanowires were in the pure wurtzite phase. Photoluminescence spectroscopy showed two peaks: one was a strong ultraviolet emission at around 380 nm, which corresponds to the near-band-edge emission; the other was a weak near-infrared emission around 750 nm, which indicates a low concentration of oxygen vacancy. Moreover, we observed that the Zn/Au alloy droplets appeared on the tips of ZnO nanowires. As a consequence, we can select areas to grow ZnO nanowires by patterning the thin metal film on the substrates. These findings prove that the low-temperature growth mechanism is via vapor–liquid–solid rather than vapor transport deposition or vapor supersaturation (vapor–solid) mechanism. On the basis of the site-specific growth and the low-temperature requirement developed from this work, the synthesis of ZnO is compatible to microelectric machining system processing.