Effects of Oxygen Vacancy on Optical and Electrical Properties of ZnO Bulks and Nanowires
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/31/11/117301/pdf
Reference24 articles.
1. The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping
2. Polarization Mechanism of Oxygen Vacancy and Its Influence on Dielectric Properties in ZnO
3. First-principles calculation of the O vacancy in ZnO: A self-consistent gap-corrected approach
4. Energetic Evolution of Single-Crystalline ZnO Nanowires and Nanotubes
5. Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO
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1. Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector*;Chinese Physics B;2021-08-01
2. Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C;physica status solidi (a);2020-09-22
3. Effect of Post-Annealing on Structural and Electrical Properties of ZnO:In Films;Chinese Physics Letters;2019-04
4. Magnesium incorporation efficiencies in Mg x Zn 1− x O films on ZnO substrates grown by metalorganic chemical vapor deposition;Chinese Physics B;2017-06
5. A p-Type Zinc-Based Metal–Organic Framework;Inorganic Chemistry;2017-05-22
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