Preparation of ZnO by a nearby vaporizing chemical vapor deposition method

Abstract

Zinc oxide (ZnO) films were prepared by a nearby vaporizing chemical vapor deposition method using bis(2,4-pentanedionato)zinc as a source material. The deposition rate increased exponentially from 0.58 to 147 nm min−1 with increasing substrate temperature (Ts). The highest preferred orientation to the c axis was obtained under the conditions that the distance between substrate and source surface was 5.0 mm, and the Ts was 300 °C. When we used a sapphire (0001) substrate, an epitaxial ZnO film could be deposited on this condition.