Growth kinetics of ZnO prepared by organometallic chemical vapor deposition

Abstract

Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C. For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.