Abstract
ABSTRACTA simple recombination model is proposed in order to explain Fermi level effects on steady-state photoconductivity in a-Si:H. The model assumes positively correlated dangling-bonds as the only localized states in the gap and takes into account the occupation statistics of correlated defect centers in the dark and under illumination. The steady-state photoconductivity and its dependence on the light intensity are investigated as a function of the Fermi level position in the gap. The results show a good agreement with experimental data from undoped, phosphorus and boron doped a-Si:H material. The quenching of the g≈2.0055 Electron Spin Resonance signal upon illumination in undoped samples and its enhancement in doped ones are also reproduced by the model.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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