Capture cross-section and density of deep gap states in a−SiHx schottky barrier structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. The temperature dependence f photoconductivity in a-Si
2. Role of gap states in discharge produced a-SiHx in determining carrier transport and recombination
3. The influence of carrier generation and collection on short-circuit currents in amorphous silicon solar cells
4. Photoelectromagnetic effect in amorphous silicon
5. Proc. AIP Topical Conf. Tetrahedrally Bonded Amorphous Semiconductors;Dresner,1981
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1. Recombination at correlated dangling bonds and the effects of Fermi level position on steady-state photoconductwiry in amorphous silicon;Philosophical Magazine B;1991-02
2. Recombination at Dangling-Bonds and Fermi Level Effects on Steady-State Photoconductivity and Light-Induced ESR in a-Si:H;MRS Proceedings;1990
3. Surface photovoltage spectroscopy in hydrogenated amorphous silicon;Journal of Applied Physics;1989-05
4. Measurement and analysis of photocurrent transient characteristics for hydrogenated amorphous-silicon photodiodes;IEEE Transactions on Electron Devices;1989
5. Amorphous Silicon Solar Cells;Advances in Solar Energy;1989
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