Silicon L2, 3-Edge Xanes Study of Platinum Silicide Thin Films

Abstract

AbstractPlatinum silicide films, with a typical thickness of several hundred Å, prepared on n-type Si(100) wafers by UHV mnagnetron sputter deposition followed by rapid thermal annealing, have been studied by Si L2,3-edge X-ray absorption near edge structure (XANES) using both total electron and total fluorescence yield detection. Samples of various annealing times were studied. XANES provides information on the electronic structure and morphology of the samples. By utilizing the sampling depth difference between the two detection methods, we can clearly see XANES data from each layer (eg. surface oxide, silicide) in the sample and can estimate the thickness of the oxide layer.