Author:
Das Suhit R.,Xu D-X.,Phillips J.,McCaffrey J.,LeBrun L.,Naem A.
Abstract
ABSTRACTPtSi/Si interfaces have been formed by depositing Pt layers on chemically cleaned, lightly doped, n-type Si (100) wafers in a UHV magnetron sputter-deposition system using ultra high purity Ar as the sputter gas, followed by ex-situ silicidation in N2 ambient utilizing a 3-step rapid thermal annealing (RTA) process. The polycrystalline PtSi layer, with oriented grains ranging in size from 50-100 nm, exhibits a columnar growth morphology. The PtSi/Si interface is planar with interface roughness in the order of 5 nm peak-to-peak. Auger depth profile shows uniform composition through the PtSi layer and a clean and chemically abrupt PtSi/Si interface.
Publisher
Springer Science and Business Media LLC
Cited by
8 articles.
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