Author:
Wang Wei-E,Lin Han-Chung,Brammertz Guy,Delabie Annelies,simoen eddy,Caymax Matty,Meuris Marc,Heyns Marc
Abstract
AbstractCatalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically dissociates molecular hydrogen into atomic hydrogen atoms, which then diffuse through the dielectric layer and neutralize certain semiconductor/dielectric interfacial defects. MOS systems with various interfacial qualities, including lattice-matched (n/p) In0.53Ga0.47As/10nm ALD-Al2O3 (or ZrO2)/Pd capacitors, an undoped Ge/˜1nm GeO2/4nm ALD-Al2O3/Pt capacitor, and an nGe/8nm ALD-Al2O3/Pt capacitor are fabricated to evaluate the effectiveness of C-FGA.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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1. Materials and Technologies for III-V MOSFETs;Fundamentals of III-V Semiconductor MOSFETs;2010