Amorphous Silicon Analogue Memory Elements

Abstract

ABSTRACTBoth Cr/p+/V and Cr/p+/Cr devices exhibit fast electrically programmable memory switching with a programmable voltage range, ΔVS, which depends only on the choice of the top metal. Despite a difference in ΔVS, both types of device have very similar electrical properties, but show one major difference in room temperature I-V characteristics, where under certain conditions, discontinuities are observed.