Author:
Osborne I.S.,Hajto J.,Rose M.J.,Snell A.J.,Leœmber P.G.,Owen A.E.
Abstract
ABSTRACTIn this paper we report the role of the a-Si:H on the electrical behaviour of Metal/ a-Si:H / Metal memory devices. We have investigated layers deposited at 250°C by the glow discharge method with various doping concentrations, from undoped up to 104vppm of either diborane or phosphine in silane. We have found that the a-Si:H layer affects the initial forming process and the subsequent OFF state resistance. The hydrogen contents of the films have been measured and are found to correlate, for the p-type samples, with the forming voltage.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
1. Negative-charge state of hydrogen in silicon
2. 4. Reeder A.A. , Thomas L.P. , Smith C. , Wittgreffe J. , Godfrey D.J. , Hajto J. , Owen A.E. , Snell A.J. , Murray A.F. , Rose M.J. , Osborne I.S. , LeComber P.G. , this conference.
3. Analogue memory and ballistic electron effects in metal-amorphous silicon structures
4. Deactivation of the boron acceptor in silicon by hydrogen
5. Amorphous Silicon Analogue Memory Elements
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献