Surface Processes Limiting the High Rate Deposition of High Electronic Quality a-Si

Abstract

ABSTRACTAmorphous silicon of a high electronic quality with Odatk 10-10, σPh ≈ 1·10-4 (Ωcm)-3 and density of gap states of about 0.3 to 2.1016 eV-1cm-3 is deposited at rates up to 17 Å/sec. The rate limiting steps are identified and their control via the plasma parameters is explained. This allows one to establish the fundamental scaling parameters for large-area high-rate deposition of a-Si. Long term stability of the films in terms of postoxidation and photode-gradation is briefly addressed.