Methods of Improving Glow-Discharge-Deposited a-Si1−xGex:H-Reference-Cited by-同舟云学术

Methods of Improving Glow-Discharge-Deposited a-Si1−xGex:H

Published:1991 Issue: Volume:219 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Tsuo Y. S.,Xu Y.,Ramsay E. A.,Crandall R. S.,Salomon S. J.,Balberg I.,Nelson B. P.,Xiao Y.,Chen Y.

Abstract

ABSTRACTWe have studied methods of improving glow-discharge-deposited a-Si1−x Gex :H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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