C Implantation for Suppression of Dislocation Formation

Abstract

ABSTRACTThis paper will show that annealing of Si implanted with moderate doses of 725 keV B results in the formation of secondary defects, the so-called category I dislocations. Surprisingly, 12C, with roughly the same mass as 11B, behaves in a very different way. Carbon implant damage does not result in dislocation formation even for damage levels > 100 times higher than that required for B implants. C is also able to avoid dislocation formation of co-implanted B ions. The C-dose needed to avoid dislocation formation for the B implant increases nonlinearly with B-dose. Special C-related secondary defects remain after annealing if the C-dose is higher than 4×1015 /cm2.