Energetic Electron Beam Induced Recrystallization of Ion Implantation Damage in Semiconductors

Abstract

ABSTRACTIsolated amorphous zones produced in GaAs, GaP, Si, and Ge by the implantation of 50 keV Kr+ or Xe+ ions have been induced to recrystallize under the influence of the electron beam in the transmission electron microscope. This effect has been investigated as a function of electron irradiation temperature and beam energy in the TEM. Temperature effects were investigated through irradiations performed at 30 and 300 K. The electron energies used ranged from 50–300 keV in the 300 K experiments and 200 keV electrons were used at 30 K.Recovery was induced in all of the materials even at electron energies below the threshold displacement energy indicating production of point defects within the crystalline material is not required to induce regrowth. In GaAs and GaP, recovery occurred for all electron energies studied, down to 50 keV. In Si, the beam induced regrowth rate approaches zero at an energy of 80 keV with the recovery rate increasing with increasing electron energy. At 30 K, the 200 keV electron beam induced recrystallization in all cases studied (GaAs, GaP, and Si).