Localized States in Electron-Irradiated GaAs

Abstract

ABSTRACTBand tailing produced by electron irradiation of n-type GaAs at helium temperatures is studied. It has been observed that conductance in the band tailing occurs via localized states as evidenced by the observation of a conductance having a frequency dependence of the form σ⊥ωs where ≈ 1.Sufficient degree of damage induces variable range hopping, σ ∝ exp (-b/Tl/4) in a defect band. The frequency dependence of the conductivity in this band is very weak.