Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperatures-Reference-Cited by-同舟云学术

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Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperatures

Published:1993-10-16 Issue:2 Volume:139 Page:K113-K116
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Euthymiou P. C.,Zardas G. E.,Symeonidis Ch.,Banbury P. C.,Kourkoutas C. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Hole traps in bulk and epitaxial GaAs crystals

2. Radiation effects in GaAs FET devices

3. Effect of α-Particle Irradiation on AlGaAs/GaAs Planar Photoconductive Detectors at Low Temperatures

4. Localized States in Electron-Irradiated GaAs

5. Irradiation-Produced Band-Tailing in Semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation;Microelectronics Journal;2008-05

2. Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiation;Microelectronics Journal;2005-01

3. Three- and low-dimensional inorganic semiconductors;Progress in Solid State Chemistry;1997-01

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