Process Induced Extended Defects in SiC Grown via Sublimation

Abstract

ABSTRACTThree possible situations of extended defect formation during sublimation growth of SiC have been investigated: a-plane growth, occurrence and effect of irregular growth interfaces, and development of elongated open volume morphological defects. While in the first case the most preferred defects are basal plane stacking faults (SFs), in other studied samples threading dislocations and high energy SFs have been revealed, these suggesting stress accumulated in the course of the growth process. Formation of morphological defects of the above character has been observed in the presence of micropipes and step flow growth mode on vicinal surfaces. Growth on atomically flat surfaces can eliminate this type of defects but the polytype uniformity is more difficult to maintain.