Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates-Reference-Cited by-同舟云学术

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Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Published:2012-07-24 Issue:1 Volume:28 Page:129-135
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Anzalone Ruggero,Camarda Massimo,Locke Christopher,Carballo Josè,Piluso Nicolò,La Magna Antonino,Volinsky Alex A.,Saddow Stephen E.,La Via Francesco

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Comsol v4.2: http://www.comsol.com.

2. Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties

3. Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling

4. Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications

5. Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis

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1. Novel Photonic Applications of Silicon Carbide;Materials;2023-01-22

2. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon;Journal of Applied Physics;2018-06-07

3. Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process;Materials Science;2017-08-04

4. Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers;Surface and Coatings Technology;2016-08

5. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications;Materials Science and Engineering: B;2015-08

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