Deformation Mechanisms in TiAl-Based Alloys Containing Low Oxygen

Author:

Sriram S.,Vasudevan Vijay K.,Dimiduk Dennis M.

Abstract

ABSTRACTThe effects of oxygen on the deformation behavior of Ti-(48-52)Al alloys is reported. Two types of studies were conducted. In the first, high purity alloy buttons containing low oxygen (~250 ppm) were prepared, whereas in the second, alloys with additions of 1 at.% Er to scavenge the oxygen from the matrix were prepared. The alloys were heat treated to produce large grains and the microstructures characterized by analytical electron microscopy. Samples prepared from the heat treated alloys were electropolished and deformed in compression to a plastic strain of 1.0-1.5% at temperatures between 25 and 800°C and the yield stress measured. The morphology of deformation, that is, slip lines and the presence of twinning, was studied by optical microscopy and the dislocation structures were characterized by weak-beam imaging in the transmission electron microscope. The results of these various studies are presented and discussed in terms of recent developments regarding the factors that appear to control the dislocation structure and the mobility of dislocations.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference27 articles.

1. The identification of a TiErO phase

2. Deformation twinning in superlattice structures

3. Nature and dissociation of the dislocations in TiAl deformed at room temperature

4. 11. Blackburn M. J. and Smith M. P. , United States Patent No. 4,294,615 (1981).

5. 27. Fraser H. L. , Kad B. , Wheeler R. and Maher D. , these proceedings (1990).

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3