Atomistics simulations of structures and properties of ½⟨110⟩ dislocations using three different embedded-atom method potentials fit to γ-TiAl-Reference-Cited by-同舟云学术

Atomistics simulations of structures and properties of ½⟨110⟩ dislocations using three different embedded-atom method potentials fit to γ-TiAl

Published:1997-05 Issue:5 Volume:75 Page:1299-1328
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Simmons J. P.¹,Rao S. I.¹,Dimiduk D. M.²

Affiliation:

1. a UES, Inc. , 4401 Dayton-Xenia Road, Dayton , Ohio , 45432 , USA

2. b Materials Directorate, Wright Laboratory , WL/MLLM, Wright-Patterson Air Force Base, Ohio , 45433 , USA

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418619708209858

Reference56 articles.

1. Bird , N. Taylor , G. and Sun , Y.Q. 1994.Materials Research Society Symposium Proceedings, Vol. 364, p. 635Pittsburgh, Pennsylvania: Materials Research Society.

2. Deformation mechanisms in the intermetallic compound TiAl

3. Copper Precipitation on Dislocations in Silicon

4. Evidence of Dislocation Jogs in Deformed Silicon

5. Embedded-atom method: Derivation and application to impurities, surfaces, and other defects in metals

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