Author:
Rauf I. A.,Siemsen R.,Grunwell M.,Egerton R. F.,Sayer M.
Abstract
A study of the electrical resistivity and microstructure of thin copper films deposited by low-pressure chemical vapor deposition from copper (I) hexafluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. Evidence for the nucleation of solid copper in the gas phase at substrate temperatures of about 250 °C is presented. A process to predict the effects of gas-phase nucleation and growth on the electrical resistivity of the resulting film is discussed.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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