Deposition of Epitaxial Titanium Carbide Films on MgO(001) and 6H–SiC(0001) by Coevaporation of Ti and C60-Reference-Cited by-同舟云学术

Deposition of Epitaxial Titanium Carbide Films on MgO(001) and 6H–SiC(0001) by Coevaporation of Ti and C60

Published:1999-04 Issue:4 Volume:14 Page:1589-1596
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Norin Lars,Lu Jun,Jansson Ulf,Malm Jan-Olle

Abstract

Epitaxial films of TiC1-x (0.15 < x < 0.50) were deposited on MgO(001) and 6H–SiC(0001) at 250 and 400 °C by coevaporation of C60 and Ti. Films deposited on MgO(001) were single-crystalline down to deposition temperatures of at least 250 °C as determined by x-`ray diffraction (XRD), low energy electron diffraction (LEED), and transmission electron microscopy (TEM). Films deposited on 6H–SiC(0001) were also epitaxial at 250 °C, but TEM showed a columnar microstructure due to the occurrence of twinned domains in the [111] growth direction normal to the substrate.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Method for the preparation of protective coatings by low‐temperature metal–organic chemical vapor deposition (MOCVD)

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