A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap

Author:

Kondoh E.,Conard T.,Brijs B.,Jin S.,Bender H.,de Potter M.,Maex K.

Abstract

An interfacial SiO2 hampers a silicidation reaction between Co and Si. A refractory metal cap is believed to block ambient oxygen diffusing toward the Co/Si interface. However, an interfacial SiO2 can also be present prior to and/or during the annealing. This work reports on our findings of the interaction between SiO2 and Co layers capped with refractory metals. It was found that Ti diffuses through the Co layer and segregates underneath the Co, which leads to the reduction of SiO2 and the formation of free Si. The free Si in-diffuses and reaches the original Ti surface. On the other hand, TiN shows a very inert behavior compared to Ti. The results are discussed in connection with Co silicidation processes.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

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2. The Effect of Oxygen in the Si Substrate on Mo, W, Ti, and Co Silicide Growth by Infrared Laser Heating

3. 20. CRC Handbook of Physics and Chemistry, 64th ed. (CRC, Boca Raton, FL, 1983).

4. Epitaxial growth of CoSi2on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system

5. 18. Smithells Metals Reference Book, 6th ed. (Butterworth, London, 1983).

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