Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes-Reference-Cited by-同舟云学术

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Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Published:2005-04 Issue:4 Volume:49 Page:606-611
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ru Guo-Ping,Van Meirhaeghe R.L.,Forment S.,Jiang Yu-Long,Qu Xin-Ping,Zhu Shiyang,Li Bing-Zong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Parallel silicide contacts;Ohdomari;J Appl Phys,1980

2. On the difference in apparent barrier height as obtained from capacitance–voltage and current–voltage-temperature measurements on Al/p-InP Schottky barriers;Song;Solid-State Electron,1986

3. Barrier inhomogeneities at Schottky contacts;Werner;J Appl Phys,1991

4. Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction;Zhu;Solid-State Electron,2000

5. Electron transport at metal–semiconductor interfaces: General theory;Tung;Phys Rev B,1992

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