Hydrogen, Acceptors, and H-Acceptor Complexes in GaN

Author:

Bosin Andrea,Fiorentini Vincenzo,Vanderbilt David

Abstract

ABSTRACTWe present ab-initio calculations on energetics and geometries of atomic hydrogen, of several candidate acceptors, and of H-acceptor complexes in wurtzite GaN For the H-Mg complex in Mg-doped GaN, we calculate the vibrational frequencies of H. Hydrogen is found to be a negative-U center. H-acceptor complex formation is always exothermic. Substitutional Be has a low formation energy and a shallow impurity level, which makes it a good candidate for p-doping in MBE growth. CN appears not to be shallow. Atomic hydrogen incorporation in undoped GaN is disfavored in an H2 atmosphere; it becomes favorable in p and n-type conditions in atomic H environments.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. First-principles calculations for defects and impurities: Applications to III-nitrides;Journal of Applied Physics;2004-04-15

2. Electron-beam dissociation of the MgH complex inp-type GaN;Journal of Applied Physics;2002-12

3. Substitutional and interstitial carbon in wurtzite GaN;Journal of Applied Physics;2002-09

4. Mg–H and Be–H complexes in c-BN;Physica B: Condensed Matter;2001-12

5. Theoretical description of H behavior in GaN p-n junctions;Journal of Applied Physics;2001-12

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