Radiation Defect-Induced Lattice Contraction of InP-Reference-Cited by-同舟云学术

Radiation Defect-Induced Lattice Contraction of InP

Published:1986 Issue: Volume:74 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Wie C. R.,Jones T.,Tombrello T. A.,Vreeland T.,Xiong F.,Zhu Z.,Burns G.,Dacol F. H.

Abstract

AbstractWe studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behaviors of lattice strain, Raman line shift, and linewidth. The lattice spacing for the planes parallel to the surface decreases as a result of irradiation, and amounts to a strain of −0.061% for (100) face, −0.056% for (110) face, and −0.050% for (111) face for 15 MeV Cl bombarded samples to a dose of 1.25E15 ions/cm2. The negative lattice strain, Raman line shift, and line width completely recover at 450°C, and show a major recovery stage at 250°C – 350°C.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference30 articles.

1. The electrical characteristics of ion implanted compound semiconductors

2. Recombination‐enhanced annealing of theE1 andE2 defect levels in 1‐MeV‐electron–irradiatedn‐GaAs

3. Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation

4. 16. Wie C.R. , Presented at the 9th Conf. on the Appl. of Accelerators in Industry and Research, Denton, Texas, Nov. 1986.

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