Microstructural Characterization of High Dose Oxygen Implanted Silicon

Author:

Batstone J. L.,White Alice E.,Short K. T.,Gibson J. M.,Jacobson D. C.

Abstract

AbstractThe microstructure of oxygen implanted silicon for use in silicon-on- insulator technology has been examined by transmission electron microscopy. A variety of buried oxide layers prepared using oxygen doses below and above that required for stoichiometric SiO2formation have been studied. High resolution imaging in crosssection has revealed exceptionally flat Si-SiO2interfaces, comparable to the best thermally grown Si-SiO2interfaces. Examination of as-implanted material shows a complex interwoven crystalline/amorphous structure which evolves during high temperature (1350–1400° C) annealing into a buried oxide layer.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

1. [11] Batstone J.L. , White Alice E. , Short K.T. and Gibson J.M. , Proc. 44th Ann. Meeting EMSA, 390 (1986)

2. [7] Celler G.K. , Hemment P.L.F. , Reeson K.J. , Kilner J.A. , Chater R.J. , Marsh C. , Booker G.R. and Stoemenos J. , To be published.

3. Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

4. [5] Alice White E. , Short K.T. , Pfeiffer L.N. , West K.W. and Batstone J.L. , These Proc.

5. [4] Celler G.K. , Batstone J.L. , West K.W. , Hemment P.L.F. and Reeson K.J. , Proc. European MRS Strasbourg (1986) To be published.

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