Effects of Indium Preamorphization on Boron Implanted Silicon Annealed by RTA

Abstract

AbstractPreamorphization by indium of boron implanted silicon layers has been studied as a means of reducing defects in the annealed and activated shallow junctions. The In preamorphized samples after RTP annealing at 950 to 1150°C show an absence of spanning dislocations. A 5 sec. anneal at 1100 °C results in the complete annihilation of residual dislocation loops at the original crystalline/amorphous (c/a) interface. The minimum dose to preamorphize Si with 200keV In was 5×1013/cm2. During annealing the In was found to localize at two peaks, one at the original c/a interface and the other closer to the surface, where In precipitation was observed.