Migration of implanted indium in silicon as a function of thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94006
Reference13 articles.
1. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
2. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
3. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
4. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
5. Implanted high value resistors
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021
2. Dependence of catalytic properties of indium implanted SiO2 thin films on the film-substrate temperature during indium ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-11
3. A study of carbon-implanted silicon for light-emitting diode fabrication;Materials Science and Engineering: B;1989-10
4. Enhanced Diffusion During Rapid Thermal Annealing Of Indium And Boron In Double Implanted Silicon;MRS Proceedings;1987
5. Effects of Indium Preamorphization on Boron Implanted Silicon Annealed by RTA;MRS Proceedings;1986
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3