Production of Mo/si Multilayers At Increased Substrate Temperatures: The Effect On D-Spacing, Interface Roughness and Density.

Abstract

ABSTRACTTo obtain the optimal growth conditions of Mo/Si multilayer structures, produced with e-beam evaporation, the effect of using enhanced deposition temperatures is investigated in detail. We describe the variations of the structure for multilayers deposited at substrate temperatures ranging from 300 K to 550 K. A temperature of 490 K was found to be the optimum resulting in low interface roughness and moderate inter-diffusion. The decrease of the dspacing at the optimum substrate temperature, compared to coatings deposited at room temperature, is explained by a change in free volume of the Si layer.