Author:
Krasnobaev L. Y.,Cuomo J. J.
Abstract
ABSTRACTSi was implanted with 115In+ ions with a dose exceeding the value of the In solid solubility. Rapid thermal annealing with W-halogen lamp was done sequentially with the wafer facing in two different positions relative to the source of the light irradiation. It has been experimentally found that short and long wavelength components of incoherent light act in a different manner on the In atom activation in Si during RTA process. The effect of In activation and deactivation caused by the RTA treatment is reversible in the temperature region of 440–1020°C. The effect of In activation and deactivation exists after thirty RTA pulses.
Publisher
Springer Science and Business Media LLC