Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films-Reference-Cited by-同舟云学术

Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

Published:1997 Issue: Volume:470 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Fiory A. T.

Abstract

ABSTRACTTemperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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3. 3. Abedrabbo S. and Ravindra N.M. , private communication.

4. Temperature Monitoring by Ripple Pyrometry in Rapid Thermal Processing

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