Cross-Sectioning Specific Devices and Regions in I.C. Wafers

Abstract

ABSTRACTLine widths of less than a micron and junction depths within devices of the order of a thousand angstroms are common practice In today's electronic components. Transmission electron microscopy (TEM) is fast becoming a very valuable and often essential tool in many areas of semiconductor manufacture. The characterization of a given device structure is often required to fully understand its electrical behavior. This paper will review the methods that can be used to prepare cross-sectional samples from specific regions within an integrated circuit device for examination in the TEM.