Simple Plan View Specimen Preparation Technique For Tem Investigation Of Semiconductors and Metals

Abstract

ABSTRACTThis paper discusses a rapid and simple specimen preparation technique which was originally developed for plan view TEM investigation of processed silicon, but which afterwards was modified for the study of GaAs, Al/Al2O3 and Silicon-On-Insulator (SOI) structures. The major advantage of this poor man's method is that no specialised nor expensive equipment is needed.A second technique is also described which is used in the case of unseeded SOI structures where the analysis of the top silicon layer is important.