Author:
Smith M. C.,Jones E. D.,Fritz I. J.,Drummond T. J.,Zipperian T. E.,Schirber J. E.
Abstract
ABSTRACTEnergy relaxation rates for light holes in InGaAs/GaAs strained layer quantum wells are measured. Two techniques were used to measure light hole temperatures as a function of power dissipated in the hole gas. For Th < 20K, Shubnikov-de Haas oscillations were used and for Th> 20K, a photoluminescence technique was employed.
Publisher
Springer Science and Business Media LLC