Energy relaxation of two‐dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97526
Reference19 articles.
1. Two-dimensional electron gas at a semiconductor-semiconductor interface
2. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
3. Effects of electron heating on the two-dimensional magnetotransport in AlGaAs/GaAs heterostructures
4. Electron heating and free‐carrier absorption in GaAs/AlGaAs single heterostructures
5. Differential negative resistance caused by inter-subband scattering in a 2-dimensional electron gas
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