Electrically Pumped Rare Earth Doped Semiconductor Lasers

Abstract

ABSTRACTThe interest in rare earth (RE) elements as luminescent centers is due to the narrowness and stability of the luminescent transitions. In this paper we review the mechanisms that can be used to electrically excite rare earth impurities in semiconductors: pair recombination energy exchange and impact excitation. The different means of providing energetic electrons for impact excitation are also discussed. We also propose a possible explanation for the temperature dependence of photoluminescence in silicon.