Electron-Phonon Scattering in Si-Doped GaN-Reference-Cited by-同舟云学术

Electron-Phonon Scattering in Si-Doped GaN

Published:1996 Issue: Volume:449 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Wetzel C.,Walukiewicz W.,Ager J. W.

Abstract

ABSTRACTPhonon-plasmon scattering in non-resonant Raman spectroscopy is used to determine the free electron concentration in Si doped GaN films. For various doping concentration and variable temperature the correlation with magneto-transport data is established. The freeze-out of the carrier concentration at low temperature is thus observed in a purely optical detection scheme. We observe a very long transient time of several hours for the carrier concentration as a reaction to temperature variation. This indicates an indirect capture and emission process with a very small cross section. The value of the Faust-Henry coefficient is determined.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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