MOVPE Growth and Optical Characterization of GaPN Metastable Alloy Semiconductor

Abstract

ABSTRACTThe Gap1–x Nx, alloy semiconductor has been grown with the N concentration as high as 6.3% by inetalorganic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) as the N source. The growth characteristics show the key role of the non-equilibrium circumstances during the growth, where the N desorption from the surface limits the N incorporaton. The band-edge states have been studied using time-resolved PL and PL excitation spectroscopies. The PL takes place via the tail states below the absorption edge. The band edge, which shifts to lower energies with increasing N concentration, originates from the A-line energy (i.e. isolated N states) rather than the indirect-gap energy of GaP in the limit x = 0.