Mechanism of grain growth in liquid-phase-sintered β–SiC

Abstract

The mechanism for grain growth of β–SiC was investigated by annealing hot-pressed β–SiC–oxynitride glass (Y–Mg–Si–Al–O–N) ceramics at 1800 °C. An observed decrease in grain growth with increasing weight fraction of liquid confirms a diffusion-controlled growth mechanism in the system. The growth of nearly spherical β–SiC grains in the annealed specimen also supports the above conclusion.