Author:
Nozik Arthur J.,Mićić Olga I.
Abstract
Quantization effects in semiconductor structures were first demonstrated in the early 1970s in III-V quantum wells; these structures consisted of a thin epitaxial film of a smaller bandgap (Eg) semiconductor (e.g., GaAs, Eg = 1.42 eV) sandwiched between two epitaxial films of a larger bandgap semiconductor (e.g., Al0.3Ga0.7As, Eg = 2.0 eV). The conduction- and valence-band offsets of the two semiconductor materials produce potential barriers for electrons and holes, respectively. The smaller bandgap semiconductor constitutes the quantum-well region and the larger bandgap material the potential barrier region. If the film of the smaller bandgap material is sufficiently thin (thickness less than the de-Broglie wavelength of the charge carriers, which typically requires thicknesses less than about 300 Å for III-V semiconductors), then the charge carriers are confined in one dimension by the potential barriers, and quantization of the energy levels for both electrons and holes can occur (Figure 1).
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Cited by
85 articles.
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