Abstract
Watanabe and Tooi first reported on the formation of silicon oxide by oxygenion implantation into silicon in 1966. Further investigations of such oxygen-implanted oxide layers have been carried out by several workers, with the result that the oxide has equivalent isolation characteristics to those for thermally grown silicon oxide. Practical applications of the oxygen-implanted oxide to semiconductor devices have been reported by only a few workers, with a suggestion of their usefulness. Unfortunately Watanabe and Tooi's work has not been followed by additional silicon-on-insulator (SOI) studies.In 1978 Izumi, Doken, and Ariyoshi succeeded in fabricating a complementary-metal-oxide-semiconductor (CMOS) ring oscillator using a buried SiO2 layer formed by oxygenion (16O+) implantation into silicon. They named the new SOI technology “SIMOX,” which is short for separation by implanted oxygen. Since then Izumi and his research group have continued their study of SIMOX technology.
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristics
2. Krause S.J. , Jung C.O. , Ravi T.S. , Wilson S.R. , and Burke D.E. , ibid. p. 93.
3. Improvement of surface morphology of SIMOX wafers by high-temperature oxidation
4. Izumi K. , presented at SOI SEMICON/West, Nantucket Island, MA, October 3-6, 1994.
5. High quality Si‐on‐SiO2films by large dose oxygen implantation and lamp annealing
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